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2SA1741_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | |||
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = â3.0 A, IB = â0.3 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS) IC = â3.0 A, IB1 = âIB2 = â0.3 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO
VCB = â60 V, IE = 0
Collector cutoff current
ICER
VCE = â60 V, RBE = 50 â¦, Ta = 125°C
Collector cutoff current
ICEX1
VCE = â60 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = â60 V, VBE(OFF) = 1.5 V,
Ta = 125 °C
Emitter cutoff current
IEBO
VEB = â5.0 V, IC = 0
DC current gain
hFE1* VCE = â2.0 V, IC = â0.5 A
DC current gain
hFE2* VCE = â2.0 V, IC = â1.0 A
DC current gain
hFE3* VCE = â2.0 V, IC = â3.0 A
Collector saturation voltage VCE(sat)1* IC = â3.0 A, IB = â0.15 A
Collector saturation voltage VCE(sat)2* IC = â4.0 A, IB = â0.2 A
Base saturation voltage
VBE(sat)1* IC = â3.0 A, IB = â0.15 A
Base saturation voltage
VBE(sat)2* IC = â4.0 A, IB = â0.2 A
Collector capacitance
Cob
VCB = â10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT
VCE = â10 V, IC = â0.5 A
Turn-on time
Storage time
Fall time
ton
IC = â3.0 A, RL = 17 â¦,
tstg
IB1 = âIB2 = â0.15 A, VCC â
â50 V
Refer to the test circuit.
tf
* Pulse test PW ⤠350 µs, duty cycle ⤠2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SA1741
MIN.
â60
â60
100
100
60
TYP.
130
80
MAX.
â10
â1.0
â10
â1.0
â10
400
â0.3
â0.5
â1.2
â1.5
0.3
1.5
0.3
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
Case Temperature TC (°C)
Case Temperature TC (°C)
2
Data Sheet D16125EJ1V0DS
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