2SA1468 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

2SA1468
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
–180
V
–180
V
–5
V
–100
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO –180 —
voltage
Collector to emitter breakdown V_(BR)CEO –180 —
voltage
Emitter to base breakdown
V_(BR)EBO
–5
—
voltage
DC current transfer ratio
h_FE*¹
100 —
Collector to emitter saturation V_CE(sat)
—
—
voltage
Base to emitter voltage
V_BE
—
—
Gain bandwidth product
f_T
—
200
Collector output capacitance Cob
—
3.5
Notes: 1. The 2SA1468 is grouped by h_FE as follows.
2. Pulse test
Grade
B
C
Mark
INB
INC
h_FE
100 to 200 160 to 320
Max Unit Test conditions
—
V
I_C = –10 µA, I_E = 0
—
V
I_C = –0.5 mA, R_BE = ∞
—
V
I_E = –10 µA, I_C = 0
320
–0.5 V
V_CE = –12 V, I_C = –2 mA*²
I_C = –30 mA, I_B = –3 mA*²
–1.0
—
—
V
MHz
pF
V_CE = –12 V, I_C = –2 mA
V_CE = –12 V, I_C = –10 mA
V_CB = –10 V, I_E = 0, f = 1 MHz