R5F213J4TNNP_11 Datasheet, PDF (35/50 Pages) Renesas Technology Corp – The R8C/3JT Group has data flash (1 KB × 4 blocks) with the background operation

R8C/3JT Group
5. Electrical Characteristics
Table 5.13 Electrical Characteristics (1) [4.2 V ≤ Vcc ≤ 5.5 V]
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ. Max.
VOH
Output “H” Other than XOUT
Drive capacity High Vcc = 5 V IOH = −20 mA Vcc − 2.0 —
Vcc
V
voltage
Drive capacity Low Vcc = 5 V IOH = −5 mA Vcc − 2.0 —
Vcc
V
XOUT
Vcc = 5 V
IOH = −200 µA 1.0
—
Vcc
V
VOL
Output “L” Other than XOUT Drive capacity High Vcc = 5 V IOL = 20 mA
—
—
2.0
V
voltage
Drive capacity Low Vcc = 5 V IOL = 5 mA
—
—
2.0
V
XOUT
Vcc = 5 V
IOL = 200 µA
—
—
0.5
V
VT+-VT-
Hysteresis
INT0, INT1,
INT2, INT3,
KI0, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRCTRG, TRCCLK,
ADTRG,
RXD0, RXD2, CLK0,
CLK2, SCL2, SDA2
0.1
1.2
—
V
RESET
0.1
1.2
—
V
IIH
Input “H” current
VI = 5 V, Vcc = 5.0 V
—
—
5.0 µA
IIL
Input “L” current
VI = 0 V, Vcc = 5.0 V
—
— −5.0 µA
RPULLUP Pull-up resistance
VI = 0 V, Vcc = 5.0 V
25
50 100 kΩ
RfXIN
Feedback XIN
resistance
—
0.3
— MΩ
VRAM
RAM hold voltage
During stop mode
1.8
—
—
V
Note:
1. 4.2 V ≤ Vcc ≤ 5.5 V at Topr = −20°C to 85°C (N version), f(XIN) = 20 MHz, unless otherwise specified.
R01DS0045EJ0100 Rev.1.00
Apr 26, 2011
Page 35 of 47