UPD166013T1J Datasheet, PDF (3/28 Pages) Renesas Technology Corp – INTELLIGENT POWER DEVICE

PD166013T1J
Preliminary
3.3 Absolute Maximum Ratings
Parameter
V_CC voltage
V_CC voltage at reverse
battery condition
V_CC voltage for full short
circuit protection
V_CC voltage under load
dump condition
Load current
Total power dissipation for
whole device (DC)
Symbol
V_CC1
V_CC2
Rating
28
–16
V_CC3
28
V_CC4
40
I_L
Self limited
P_D
2.0
Voltage at IN pin
Voltage at SEN pin
Voltage at IS pin
V_IN
V_SEN
V_IS
Inductive load switch-off
energy dissipation single
pulse
Maximum allowable energy
under short circuit condition
E_AS
E_AS(SC)
–0.5 to 10
V_CC2 to 0
–0.5 to 10
V_CC2 to 0
–0.5 to
V_CC + 0.5
V_CC2 to 0
17
40
Channel temperature
Dynamic temperature
increase while switching
Storage temperature
ESD susceptibility
T_ch
T_ch
T_stg
V_ESD
–40 to +150
60
–55 to +150
2000
200
Note: All voltages refer to ground pin of the device.
(T_A = 25°C, unless otherwise specified)
Unit
Test Conditions
V
V At nominal load current.
V
V R_I = 1 , R_L = 6.8 , R_IS = 2 k, t_d = 400 ms
A
W T_A = 85°C,
Device on 50 mm  50 mm  1.5 mm epoxy PCB
FR4 with 6 cm² of 70 m copper area
V V_CC = 9 V to 16 V
R_IN = 2 k, At reverse battery condition, t < 2 min.
V V_CC = 9 V to 16 V
R_SEN = 2 k, At reverse battery condition, t < 2 min.
V V_CC = 9 V to 16 V
R_IS = 2 k, At reverse battery condition, t < 2 min.
mJ V_CC = 13.5 V, I_L = 2.0 A, T_ch,start < 150°C
mJ V_CC = 18 V, T_ch,start < 150°C,
R_supply = 10 m, R_short = 50 m
L_supply = 5 H, L_short = 15 H
°C
°C
°C
V HBM
V MM
AEC-Q100-002 std.
R = 1.5 k, C = 100 pF
AEC-Q100-003 std.
R = 0 , C = 200 pF
3.4 Thermal Characteristics
Parameter
Thermal characteristics
Symbol
R_th(ch-a)
R_th(ch-c)
MIN.
—
—
TYP.
30
2.4
MAX.
—
—
Unit
°C/W
°C/W
Test Conditions
All channel Device on 50 mm  50
All channel ^{mm  1.5 mm epoxy}
PCB FR4 with 6 cm² of
70 m copper area
R07DS0852EJ0100 Rev.1.00
Aug 20, 2012
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