UPA2765T1A Datasheet, PDF (3/7 Pages) Renesas Technology Corp – N-channel MOSFET 30 V, 100 A, 1.3 m

μPA2765T1A
TYPICAL CHARACTERISTICS (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
ID(pulse)=256A
RDVSG(So=n)1L0iVmited
1ms^PW=200us
100ms^10ms
Power Dissipation Limited
0.1
Tc=25°C
Single Pulse
0.01
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage – V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Rth(ch-A) = 83.3 °C/W
10
Rth(ch-C = 1.5 °C/W
1
0.1
0.01
100 μ
Rth(ch-A) : Mounted on a glass expoxy board (25.4mm x 25.4mm 0.8 mmt)
1m
10 m
100 m
1
10
100
PW - Pulse Width - s
1000
DRAIN CURRENT(DC) vs. CASE TEMPERATURE
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
300
250
VGS=10V
200
150
VGS=4.5V
100
50
0
0
Pulsed
0.1 0.2 0.3 0.4 0.5 0.6 0.7
V_DS - Drain to Source Voltage - V
R07DS0882EJ0102 Rev.1.02
Nov 28, 2012
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