UPA2735GR_16 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – P-channel MOSFET

μPA2735GR
TYPICAL CHARACTERISTICS (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_A - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
100 ms
I_D(pulse) = –150 A
I_D(DC)= –16 A
30 ms
-10
-1
-0.1
-0.01
R ^DS₍⁽_V^onG)LS^{i=mi–te1d0 V)}
DC
Power Dissipation Limited
Single Pulse T_A = 25°C
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.1
-1
PW = 100 μ s
1 _ms
-10
-100
V_DS - Drain to Source Voltage – V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A) = 114 ºC/W
10
1
0.1
0.01
100 μ
R_th(ch-A)：Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
-150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
-50
V_GS = –10 V
–4.5 V
Pulsed
-0
-0
-0.5
-1
-1.5
V_DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
T_A = 150°C
75°C
25°C
-1
–55°C
-0.1
-0.01
Pulsed
V_DS = –10 V
-0.001
-0
-1
-2
-3
-4
V_GS - Gate to Source Voltage - V
R07DS1319EJ0100 Rev.1.00
Jan 25, 2016
Page 3 of 6