RQJ0304DQDQA_11 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0304DQDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Typical Output Characteristics
–10
–8 V
–5 V
Pulse Test
–4.8 V Tc = 25°C
–4.4 V
–10 V
–8
–4.2 V
–4.0 V
–3.8 V
–3.6 V
–3.4 V
–6
–3.2 V
–3.0 V
–2.8 V
–4
–2.6 V
–2.4 V
–2
0
0
–2.0 V
–1.6 V
V_GS = 0V
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (2)
–1
Tc = 75°C
–0.1
–0.01
25°C
–25°C
–0.001
V_DS = –10 V
Pulse Test
–0.0001
0 –0.5 –1 –1.5 –2 –2.5 –3
Gate to Source Voltage V_GS (V)
Preliminary
Maximum Safe Operation Area
–10
–1
–0.1
Operation in this area
is limited by R_DS(on)
Ta = 25°C
1 Shot Pulse
–0.01
–0.01 –0.1
–1
–10
–100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (1)
–2.0
–1.6
V_DS = –10 V
Pulse Test
–1.2
–0.8
Tc = 75°C
–0.4
25°C
–25°C
00
1
2
3
4
Gate to Source Voltage V_GS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
–1.5
–1 mA
I_D = –10 mA
–1.0
–0.5
V_DS = –10 V
–0.1 mA
Pulse Test
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0296EJ0200 Rev.2.00
Mar 28, 2011
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