RQJ0203WGDQA_11 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0203WGDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Preliminary
Maximum Safe Operation Area
–100
–10
Operation in this area
is limited by R_DS(on)
100 μs
–1
–0.1
PW ^{1 ms}
DC _{Ope=ra1ti0o0nms}
Ta = 25°C
1 Shot Pulse
–0.01
–0.01 –0.1
–1
–10 –100
Drain to Source Voltage V_DS (V)
Typical Output Characteristics
–10 V _{–5 V}
–6
–3.0 V
–2.8 V
–3.2 V
–5
–3.4 V
–2.6 V
–4
–3.6 V
–2.4 V
–2.2 V
–3
–2.0 V
–2
–1.8 V
–1
–1.6 V
Pulse Test
Tc = 25°C V_GS = 0 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (2)
–1
V_DS = –10 V
Pulse Test
–0.1
–0.01
Tc = 75°C
–0.001
25°C
–25°C
–0.0001
0
–0.5
–1
–1.5
–2
Gate to Source Voltage V_GS (V)
Typical Transfer Characteristics (1)
–6
V_DS = –10 V
–5 ^{Pulse Test}
–4
–3
–2
–1 _{Tc = 75°C}
25°C
–25°C
0 _{0 –0.5 –1 –1.5 –2 –2.5 –3 –3.5 –4}
Gate to Source Voltage V_GS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
–1.5
V_DS = –10 V
Pulse Test
–1
ID = –10 mA
–1 mA
–0.5
–0.1 mA
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0292EJ0400 Rev.4.00
Mar 28, 2011
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