RJK6026DPE_09 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK6026DPE
Main Characteristics
Maximum Safe Operation Area
100
10 µs
10
PW
1
= _{100 µs}
0.1
0.01
Operation in this
area is limited by
R_DS(on)
Tc = 25°C
1 shot
0.001
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
Tc = 75°C
1
25°C
−25°C
0.1
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
7
V_GS = 10 V
6 ^{Pulse Test}
5
4
I_D = 2.5 A
3
1.25 A
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1479-0100 Rev.1.00 Jul 02, 2009
Page 3 of 6
Typical Output Characteristics
5
Ta = 25°C
Pulse Test
4
6V
10 V
3
5.8 V
5.6 V
5.4 V
5.2 V
2
5.0 V
1
V_GS = 4.8 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
100
V_GS = 10 V
Ta = 25°C
Pulse Test
10
1
0.1
1
10
Drain Current I_D (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
1
10
100
Reverse Drain Current I_DR (A)