RJK6018DPM_12 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 600V - 30A - MOS FET High Speed Power Switching

RJK6018DPM
Main Characteristics
Maximum Safe Operation Area
1000
100
P_W
10 _μs
10
= _{100 μs}
1
Operation in this
area is limited by
R_DS(on)
0.1
Ta = 25°C
1 shot
0.01
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
Pulse Test
10
Tc = 75°C
1
25°C
−25°C
0.1
0.01
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.8
Pulse Test
V_GS = 10 V
0.6
30 A
I_D = 45 A
0.4
10 A
0.2
15 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0131EJ0200 Rev.2.00
Jun 21, 2012
Preliminary
Typical Output Characteristics
80
Ta = 25°C
Pulse Test
60
40
6.4 V ^{6.2 V}
8 V, 10 V
6V
5.8 V
5.6 V
20
5.4 V
V_GS = 5.2 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
V_GS = 10 V
Ta = 25°C
Pulse Test
1
0.1
1
10
100
Drain Current I_D (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
10
0.1
di / dt = 100 A / μs
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I_DR (A)
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