RJK4034DJE_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 400V - 1.6A - MOS FET High Speed Power Switching

RJK4034DJE
Main Characteristics
Maximum Safe Operation Area
10
1
0.1
0.01
PW ^{10 μ}s
= _{100 μs}
Operation in this
area is limited by
R_DS(on)
Tc = 25°C
1 shot
0.01
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
1
0.1
Ta = 75°C
0.01
25°C
−25°C
0.001
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
10
8
I_D = 1.6 A
6
4
0.4 A
0.8 A
2
V_GS = 10 V
Pulse Test
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0864EJ0100 Rev.1.00
Aug 10, 2012
Preliminary
Typical Output Characteristics
3.0
Ta = 25°C
Pulse Test
2.5
2.0
10 V
15 V
8V
6.4 V
1.5
6V
1.0
5.6 V
0.5
V_GS = 5 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
100
V_GS = 10 V
Ta = 25°C
Pulse Test
10
1
0.1
1
10
Drain Current I_D (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
10
0.1
di/dt = 100 A/μs
V_GS = 0, Ta = 25°C
1
10
Reverse Drain Current I_DR (A)
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