RJK4006DPP-M0 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

RJK4006DPP-M0
Main Characteristics
Maximum Safe Operation Area
100
10
10 _μs
1
Operation in this
area is limited by
0.1
R_DS(on)
Tc = 25°C
1 shot
0.01
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
Tc = −25°C
25°C
12
75°C
8
4
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
2.0
V_GS = 10 V
Pulse Test
1.6
1.2
2A
I_D = 4 A
1A
0.8
0.4
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0228EJ0100 Rev.1.00
Dec 14, 2010
Preliminary
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
16
9 V ^{7 V 6 V 5.8 V}
10 V
12
5.6 V
5.4 V
8
5.2 V
5V
4
V_GS = 4.8 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
V_GS = 10 V
Ta = 25°C
Pulse Test
1
0.1
1
2
5
10
20
Drain Current I_D (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
100
10
0.1
di / dt = 100 A / μs
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I_DR (A)
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