RJK1056DPB_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching

RJK1056DPB
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
40
4.4 V
Pulse Test
4.2 V
30
4.0 V
20
V_GS = 3.8 V
10
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
I_D = 20 A
200
10 A
100
5A
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
R07DS1059EJ0200 Rev.2.00
Apr 11, 2013
Preliminary
Maximum Safe Operation Area
1000
Tc = 25°C
1 shot Pulse
100
10
1 _ms
1 ^{Operation in}
this area is
PW = 10 ms
limited by R_DS(on)
0.1
DC Operation
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
10
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
V_GS = 10 V
10
1
0.1
1
10
100
Drain Current I_D (A)
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