RJK0653DPB_13 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching

RJK0653DPB
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
3.0 V
40
4.5 V, 10 V
2.8 V
Pulse Test
30
2.6 V
20
10
V_GS = 2.4 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
100
I_D = 20 A
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
R07DS0078EJ0200 Rev.2.00
Apr 09, 2013
Preliminary
Maximum Safe Operation Area
1000
100
10 _μs
1 _ms
10
PW = 10 ms
Operation in
1 _{this area is}
limited by R_DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1
1
DC Operation
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
10
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
10
V_GS = 4.5 V
10 V
1
0.1
0.1
1
10
100 1000
Drain Current I_D (A)
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