RJH60F7BDPQ-A0 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – 600V - 50A - IGBT High Speed Power Switching

RJH60F7BDPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
100
P_W
= _{10 μs}
10
1
Tc = 25°C
Single pulse
0.1
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
160
P_VuCl_Ese_=T1e0st_V
T_Pau=lse25T°_eCst
120
80
Tc = 75°C
40
25°C
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
1.8
I_C = 90 A
1.6
50 A
1.4
1.2
20 A
1.0
0.8 _{VGE = 15 V}
Pulse Test
0.6
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0633EJ0100 Rev.1.00
Feb 17, 2012
Preliminary
Typical Output Characteristics
Pulse Test
160 _{Ta = 25°C}
10 V
120
15 V
80
40
9.4 V
9.6 V ^{9.2 V}
9.8 V
9V
8.8 V
8.6 V
8.4 V
8.2 V
V_GE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
7
Pulse Test
6
Ta = 25°C
5
I_C = 20 A
4
50 A
90 A
3
2
1
0
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
8
7
I_C = 10 mA
6
5
1 mA
4
3 _{VCE = 10 V}
Pulse Test
2
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
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