RJH1CF5RDPQ-80_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1CF5RDPQ-80
Main Characteristics
Maximum Safe Operation Area
1000
PW = 10 μs
100
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000 10000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
80
PVu_Cl_Ese=T1e0stV
TPau=lse25T°_eCst
60
40
Tc = 75°C
25°C
20
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
6
5
I_C = 100 A
4
50 A
3
25 A
2
1 _{VGE = 15 V}
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0355EJ0100 Rev.1.00
May 12, 2011
Preliminary
Typical Output Characteristics
100
Ta = 25°C
10 V
Pulse Test _{13 V}
80
15 V
20 V
60
9.5 V
9V
8.5 V
40
7.5 V
20
V_GE = 7 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
4.5
Ta = 25°C
Pulse Test
4.0
I_C = 100 A
3.5
3.0
50 A
2.5
2.0
25 A
1.5
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
6
I_C = 10 mA
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
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