RJH1CF4RDPQ-80_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1CF4RDPQ-80
Main Characteristics
Maximum Safe Operation Area
1000
PW = 10 μs
100
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000 10000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
80
PVu_Cl_Ese=T1e0stV
TPau=lse25T°_eCst
60
40
Tc = 75°C
20
25°C
–25°C
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
6
5
I_C = 80 A
4
40 A
3
20 A
2
1
V_GE = 15 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS0354EJ0100 Rev.1.00
May 12, 2011
Preliminary
Typical Output Characteristics
80
Ta = 25°C
Pulse Test
10 V
60
15 V
9.5 V
9V
20 V
40
8.5 V
8V
20
V_GE = 7.5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
6
Ta = 25°C
Pulse Test
5
4
I_C = 80 A
3
40 A
2
20 A
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
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