RJH1BF6RDPQ-80 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1BF6RDPQ-80
Main Characteristics
Maximum Safe Operation Area
1000
PW = 10 μs
100
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000 10000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
100
V_CE = 10 V
Pulse Test
80
60
40
Tc = 75°C
20
25°C
–25°C
0
2
4
6
8 10
12
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
4.0
V_GE = 15 V
3.5 ^{Pulse Test}
3.0
I_C = 100 A
2.5
55 A
2.0
30 A
1.5
1.0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0393EJ0100Rev.1.00
May 16, 2011
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
9V
10 V
15 V
60
20 V
40
20
8.6 V ^{8.4 V}
8.2 V
8V
7.8 V
7.6 V
7.4 V
7.2 V
V_GE = 7 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 25°C
Pulse Test
4
I_C = 100 A
3
2
55 A
30 A
1
6 8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temperature (Typical)
10
V_CE = 10 V
Pulse Test
8
I_C = 10 mA
6
4
1 mA
2
0
-25 0 25 50 75 100 125 150
Junction Temperature Tj (°C)
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