RJF0618JPE Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 60V-40A Silicon N Channel Thermal FET Power Switching

RJF0618JPE
Main Characteristics
Power vs. Temperature Derating
60
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
80
10 V
70
9V
60
8V
50
5V
40
30
4V
V_GS = 3 V
20
10
Pulse Test
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Pulse Test
600
400
I_D = 20 A
200
10 A
0
5A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1069EJ0100 Rev.1.00
May 15, 2013
Target Specifications
Maximum Safe Operation Area
100 _{Thermal shut down}
Operation area
10
1 ms
PW = 10 ms
1
0.1
0.01
Operation in
this area is
limited by R_{DS (on)}
DC Operation
(Tc = 25°C)
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
40
V_DS = 10 V
Pulse Test
30
20
Tc = –40°C
25°C
10
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
100
V_GS = 4 V
10
10 V
1
0.1
1
10
100
Drain Current I_D (A)
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