RJF0609JSP_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 60V - 1.5V Silicon N Channel Thermal FET Power Switching

RJF0609JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
3.0 ^{(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)}
2.0
1.0
1 _Driv2eDr ^rOivpeer _{rOaptieornation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
5
5V
6V
Pulse Test
4
8V
10 V
4V
3
V_GS = 3.5 V
2
1
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
300
Pulse Test
200
0.75 A
100
0.5 A
I_D = 0.25 A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1066EJ0100 Rev.1.00
May 10, 2013
Preliminary
Maximum Safe Operation Area
100
Ta = 25°C
1 shot Pulse
1 Driver Operation
Thermal shut down
operation area
10
PW = 1 ms
1
0.1
DC _{Operation PW}
10 _ms
Operation
in this area
is limited R_DS(on)
≤ _{10s Note8}
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Note 8:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
1.5
V_DS = 10 V
Pulse Test
1.0
Tc = 150°C
0.5
25°C
−40°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
V_GS = 4 V
100
10 V
10
0.1
1
10
Drain Current I_D (A)
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