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R1EX25032ASA00G Datasheet, PDF (3/22 Pages) Renesas Technology Corp – Serial Peripheral Interface 32k EEPROM 64k EEPROM | |||
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R1EX25032ASA00G/R1EX25064ASA00G/R1EX25032ATA00G/R1EX25064ATA00G
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*1
VCC
ï0.6 to + 7.0
V
Vin
ï0.5*2 to +7.0
V
Topr
ï40 to +105
ï°C
Storage temperature range
Tstg
ï55 to +125
ï°C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): ï3.0 V for pulse width ï£ 50 ns.
DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
VCC
1.8
VSS
0
Input voltage
VIH
VCC ï´ 0.7
VIL
ï0.3*1
Operating temperature range
Topr
ï40
Notes: 1. VIL (min): ï1.0 V for pulse width ï£ 50 ns.
2. VIH (max): VCC + 1.0 V for pulse width ï£ 50 ns.
Typ
Max
Unit
ï¾
5.5
V
0
0
V
ï¾
VCC ï« 0.5*2
V
ï¾
VCC ï´ 0.3
V
ï¾
ï«105
ï°C
Capacitance
(Ta = +25ï°C, f = 1 MHz)
Test conditions
Parameter
Symbol Min
Typ
Max
Unit
Input capacitance (D,C, S, W ,HOLD)
Cin*1
ï¾
ï¾
6.0
pF Vin = 0 V
Output capacitance (Q)
CI/O*1
ï¾
ï¾
8.0
pF Vout = 0 V
Note: 1.Not 100ï¥ tested.
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100ï¥ tested.
Ta=85ï°C
1,000k Cycles min.
20 Years min.
Ta=105ï°C
200k Cycles min.
20 Years min.
(VCC = 1.8 V to 5.5 V)
Notes
1
1
R10DS0030EJ0100 Rev.1.00
Mar. 08, 2013
Page 3 of 20
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