R1EX25008ASA00I_15 Datasheet, PDF (3/22 Pages) Renesas Technology Corp – Serial Peripheral Interface 8k EEPROM (1024-word × 8-bit) 16k EEPROM (2048-word × 8-bit)

R1EX25008ASA00I/R1EX25008ATA00I/R1EX25016ASA00I/R1EX25016ATA00I
Preliminary
Block Diagram
VCC
VSS
S
W
C
HOLD
D
Q
Voltage detector
High voltage generator
Memory array
Y-select & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*¹
V_CC
−0.6 to +7.0
V
V_IN
−0.5*² to +7.0
V
Topr
−40 to +85
°C
Storage temperature range
Tstg
−55 to +125
°C
Notes: 1. Including electrical characteristics and data retention.
2. V_IN (min): −3.0 V for pulse width ≤ 50 ns.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
V_CC
1.8
⎯
Input voltage
Operating temperature range
V_SS
0
0
V_IH
V_CC × 0.7
⎯
V_IL
−0.3*¹
⎯
Topr
−40
⎯
Note: 1. V_IN (min): −1.0 V for pulse width ≤ 50 ns.
Max
5.5
0
V_CC + 0.5
V_CC × 0.3
+85
Unit
V
V
V
V
°C
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input capacitance (D, C, S, W, HOLD)
Cin*¹
⎯
⎯
6.0
pF Vin = 0 V
Output capacitance (Q)
C_I/O*¹
⎯
⎯
8.0
pF Vout = 0 V
Note: 1. Not 100% tested.
Memory cell characteristics
Endurance
Data retention
Note: 1. Not 100% tested.
Ta=25°C
1,000k Cycles min.
100 Years min.
Ta=85°C
100k Cycles min.
10 Years min.
(V_CC = 1.8 V to 5.5 V)
Notes
1
1
R10DS0220EJ0200 Rev.2.00
Nov 05, 2013
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