R1EX24512BSAS0I_13 Datasheet, PDF (3/19 Pages) Renesas Technology Corp – Two-wire serial interface 512k EEPROM (64-kword × 8-bit)

R1EX24512BSAS0I/R1EX24512BTAS0I
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V_SS
V_CC
−0.6 to +7.0
V
Input voltage relative to V_SS
Operating temperature range*¹
Vin
−0.3 to V_CC +0.3
V
Topr
−40 to +85
°C
Storage temperature range
Tstg
−55 to +125
°C
Notes: 1. Including electrical characteristics and data retention.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
Min
Typ
Max
Unit
V_CC
1.8
⎯
5.5
V
V_SS
0
0
0
V
V_IH
V_CC × 0.7
⎯
V_CC + 0.3
V
V_IL
−0.3
⎯
V_CC × 0.3
V
Topr
−40
⎯
+85
°C
DC Characteristics
(Ta = −40 to +85°C, V_CC = 1.8 V to 5.5 V)
Parameter
Symbol Min Typ Max Unit
Test conditions
Input leakage current
I_LI
⎯
⎯
2.0
μA V_CC = 5.5 V, Vin = 0 to 5.5 V
Output leakage current
I_LO
⎯
⎯
2.0
μA V_CC = 5.5 V, Vout = 0 to 5.5 V
Standby V_CC current
I_SB
⎯
1.0
2.0
μA V_CC = 5.5 V, Vin = V_SS or V_CC
⎯
0.2
⎯
μA V_CC = 3.3 V, Vin = V_SS or V_CC
Read V_CC current
I_CC1
⎯
⎯
1.0
mA V_CC = 5.5 V, Read at 400 kHz
⎯
0.3
⎯
mA V_CC = 3.3 V, Read at 400 kHz
Write V_CC current
I_CC2
⎯
⎯
5.0
mA V_CC = 5.5 V, Write at 400 kHz
⎯
1.5
⎯
mA V_CC = 3.3 V, Write at 400 kHz
Output low voltage
V_OL2
⎯
⎯
0.4
V
V_CC = 2.7 to 5.5 V, I_OL = 3.0 mA
V_OL1
⎯
⎯
0.2
V
V_CC = 1.8 to 2.7 V, I_OL = 1.5 mA
Capacitance
(Ta = +25°C, f = 1 MHz)
Test conditions
Parameter
Symbol Min
Typ
Max
Unit
Input capacitance (A0 to A2, SCL, WP) Cin*¹
⎯
⎯
6.0
pF Vin = 0 V
Output capacitance (SDA)
C_I/O*¹
⎯
⎯
6.0
pF Vout = 0 V
Note: 1. Not 100% tested.
Memory cell characteristics
Endurance
Data retention
Notes: 1. Not 100% tested.
1,000k Cycles min.
100 Years min.
(V_CC = 1.8 V to 5.5 V)
Notes 1
Notes 1
Data of shipped sample
All bits of EEPROM are logical “1” (FF Hex) at shipment.
R10DS0026EJ0400 Rev.4.00
Sep, 20, 2013
Page 3 of 17