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R1EX24256BSAS0A_12 Datasheet, PDF (3/18 Pages) Renesas Technology Corp – Two-wire serial interface 256k EEPROM (32-kword 8-bit) | |||
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R1EX24256BSAS0A/R1EX24256BTAS0A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*1
VCC
ï0.6 to +7.0
V
Vin
ï0.3 to VCC+0.3
V
Topr
ï40 to +85
ï°C
Storage temperature range
Tstg
ï55 to +125
ï°C
Notes: 1. Including electrical characteristics and data retention.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
Min
Typ
Max
VCC
VSS
VIH
VIL
Topr
1.8
0
VCC ï´ 0.7
ï0.3
ï40
ï¾ï
5.5
0
0
ï¾
VCC + 0.3
ï¾
VCC ï´ 0.3
ï¾
+85
Unit
V
V
V
V
ï°C
DC Characteristics
(Ta = ï40 to +85ï°C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
ILI
ï¾
ï¾
2.0
ïA VCC = 5.5 V, Vin = 0 to 5.5 V
Output leakage current
ILO
ï¾
ï¾
2.0
ïA VCC = 5.5 V, Vout = 0 to 5.5 V
Standby VCC current
ISB
ï¾
1.0
2.0
ïA Vin = VSS or VCC
Read VCC current
ICC1
ï¾
ï¾
1.0
mA VCC = 5.5 V, Read at 400 kHz
Write VCC current
ICC2
ï¾
ï¾
3.0
mA VCC = 5.5 V, Write at 400 kHz
Output low voltage
VOL2
ï¾
ï¾
0.4
V VCC = 2.7 to 5.5 V, IOL = 3.0 mA
VOL1
ï¾
ï¾
0.2
V VCC = 1.8 to 2.7 V, IOL = 1.5 mA
Capacitance
Parameter
Symbol Min
Input capacitance (A0 to A2, SCL, WP)
Cin*1
ï¾
Output capacitance (SDA)
CI/O*1
ï¾
Note: 1. Not 100ï¥ tested.
Memory cell characteristics
Endurance
Data retention
Notes: 1. Not 100ï¥ tested.
Ta=25ï°C
1,000k Cycles min.
100 Years min.
(Ta = +25ï°C, f = 1 MHz)
Typ
Max
Unit
Test conditions
ï¾
6.0
pF Vin = 0 V
ï¾
6.0
pF Vout = 0 V
Ta=85ï°C
100k Cycles min
10 Years min.
(VCC = 1.8 V to 5.5 V)
Notes
1
1
R10DS0005EJ0101 Rev.1.01
Jul. 26, 2012
Page 3 of 16
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