R1EX24004ASAS0G Datasheet, PDF(3/18 Page) Renesas Technology Corp – Two-wire serial interface 4k EEPROM Clock frequency

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R1EX24004ASAS0G Datasheet, PDF (3/18 Pages) Renesas Technology Corp – Two-wire serial interface 4k EEPROM Clock frequency

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R1EX24004ASAS0G/R1EX24004ATAS0G

Preliminary

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range*1

VCC

ï0.6 to +7.0

Vin

ï0.5*2 to +7.0

Topr

ï40 to +105

ï°C

Storage temperature range

Tstg

ï55 to +125

ï°C

Notes: 1. Including electrical characteristics and data retention.

2. Vin (min): ï3.0 V for pulse width ï£ 50 ns.

DC Operating Conditions

Parameter

Symbol

Min

Typ

Supply voltage

VCC

1.8

ï¾ï

VSS

Input high voltage

Input low voltage

VIH

VCC ï´ 0.7

ï¾

VIL

-0.3*1

ï¾

Operating temperature

Topr

ï40

ï¾

Notes: 1. VIL (min): ï1.0 V for pulse width ï£ 50 ns.

2. VIH (max): VCC + 1.0 V for pulse width ï£ 50 ns.

Max

5.5

VCC ï« 0.5*2

VCC ï´ 0.3

+105

Unit

ï°C

DC Characteristics

(Ta = ï40 to +105ï°C, VCC = 1.8 V to 5.5 V)

Parameter

Symbol Min

Typ

Max Unit

Test conditions

Input leakage current

ILI

ï¾

2.0

ïA VCC = 5.5 V, Vin = 0 to 5.5 V

Output leakage current

ILO

ï¾

2.0

ïA VCC = 5.5 V, Vout = 0 to 5.5 V

Standby VCC current

ISB

ï¾

2.0

ïA VCC = 5.5 V, Vin = VSS or VCC

ï¾ï

0.5

ï¾

ïAï VCC = 3.3 V, Vin = VSS or VCC, Ta=25ï°C

Read VCC current

ICC1

ï¾

1.0

mA VCC = 5.5 V, Read at 400 kHz

ï¾ï

0.2ï

ï¾

mA VCC = 3.3 V, Read at 400 kHz, Ta=25ï°C

Write VCC current

ICC2

ï¾

2.5

mA VCC = 5.5 V, Write at 400 kHz

ï¾ï

1.0ï

ï¾

mA VCC = 3.3 V, Write at 400 kHz, Ta=25ï°C

Output low voltage

VOL2

ï¾

0.4

V VCC = 2.7 to 5.5 V, IOL = 3.0 mA

VOL1

ï¾

0.2

V VCC = 1.8 to 2.7 V, IOL = 1.5 mA

Capacitance

(Ta = +25ï°C, f = 1 MHz)

Parameter

Symbol Min

Typ

Max

Unit

Test conditions

Input capacitance (A1, A2, SCL, WP)

Cin*1

ï¾

6.0

pF Vin = 0 V

Output capacitance (SDA)

CI/O*1

ï¾

6.0

pF Vout = 0 V

Note: 1. Not 100ï¥ tested.

Memory cell characteristics

Endurance

Data retention

Note: 1. Not 100ï¥ tested.

Ta=85ï°C

1,000k Cycles min.

20 Years min.

Ta=105ï°C

200k Cycles min.

20 Years min.

(VCC = 1.8 V to 5.5 V)

Notes

Data of shipped sample

All bits of EEPROM are logical â1â (FF Hex) at shipment.

R10DS0079EJ0100 Rev.1.00

Mar. 06, 2013

Page 3 of 16

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