PA1727_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1727
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA1727 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Single chip type
• Low on-state resistance
RDS(on)1 = 14 mΩ TYP. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 17 mΩ TYP. (VGS = 4.5 V, ID = 5.0 A)
RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.0 A)
• Low Ciss: Ciss = 2400 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
5 _{ORDERING INFORMATION}
PART NUMBER
PACKAGE
µPA1727G
Power SOP8
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 ; Source
4
; Gate
5, 6, 7, 8 ; Drain
1
4
5.37 Max.
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (Pulse) ^Note1
ID(pulse)
±40
A
Total Power Dissipation (TA = 25°C) ^Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Single Avalanche Current ^Note3
IAS
10
A
Single Avalanche Energy ^Note3
EAS
200
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 1200 mm² x 2.2 mm
3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14330EJ3V0DS00 (3rd edition)
Date Published March 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000, 2001