NP90N03VHG Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N03VHG
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
R^D_(V^S(oGnS)
Limit
= ^{1i 0}
ed
V)
ID ( D C )
ID(pul s e)
DC
PW
= _{1i 00 μs}
10
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
125
100
75
50
25
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
1 ms
10 ms
10
100
V_DS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rt h(ch-A) = 125°C/W
100
10
Rt h(ch-C) = 1.43°C/W
1
0.1
0.01
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
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