NP82N06DLD_15 Datasheet, PDF (3/6 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
NP82N06CLD,NP82N06DLD,NP82N06ELD
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Channel Temperature 175 degree rated
• Super Low On-state Resistance
RDS(on)1 = 8.5 mΩ (MAX.) (VGS = 10 V, ID = 41 A)
RDS(on)2 = 10 mΩ (MAX.) (VGS = 5 V, ID = 41 A)
• Low Ciss : Ciss = 4830 pF (TYP.)
• Built-in Gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP82N06CLD
TO-220AB
NP82N06DLD
TO-262
NP82N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±82
A
±210
A
Total Power Dissipation (TA = 25 °C)
PT
1.8
W
Total Power Dissipation (Tch = 25 °C)
PT
174
W
Single Avalanche Current
Single Avalanche Energy ^Note2
IAS
TBD
A
EAS
TBD
mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to + 175 °C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V →0
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
0.86
°C/W
Rth(ch-A)
83.3
°C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Document No. D13794EJ2V0PM00 (2nd edition)
Date Published January 1999 NS CP(K)
Printed in Japan
©
1998