NP80N04MDG Datasheet, PDF (3/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04MDG, NP80N04NDG, NP80N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for
high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04MDG-S18-AY ^Note
NP80N04NDG-S18-AY ^Note
NP80N04PDG-E1B-AY ^Note
NP80N04PDG-E2B-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Tape
1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
• Logic level
• Super low on-state resistance
- NP80N04MDG, NP80N04NDG
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PDG
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19795EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009