NP60N055VUK_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP60N055VUK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
I_D(Pulse) = 240 A
RDS(ON) Limited
(V_GS=10 V)
I_D(DC) = 60 A
PW _{= 100 μs}
10 Power Dissipation Limited
1
Secondary Breakdown Limited
0.1
T_C = 25°C
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A) = 125°C/W
10
R_th(ch-C) = 1.43°C/W
1
0.1
0.01
0.1 m
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single pulse
100
1000
R07DS0588EJ0100 Rev.1.00
Dec 12, 2011
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