NP60N04KUG_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N04KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N04KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP60N04KUG
TO-263 (MP-25ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 6.1 mΩ MAX. (VGS = 10 V, ID = 30 A)
• Low Ciss: Ciss = 3400 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current ^Note2
IAR
Repetitive Avalanche Energy ^Note2
EAR
40
V
±20
V
±60
A
±240
A
1.8
W
88
W
175
°C
−55 to +175 °C
30
A
90
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch(peak) ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.71
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16861EJ3V0DS00 (3rd edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004