NP60N03SUG_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N03SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP60N03SUG-E1-AY ^Note
NP60N03SUG-E2-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK) typ. 0.27 g
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 30 A)
• High current rating
ID(DC) = ±60 A
• Low input capacitance
Ciss = 5000 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±60
A
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
105
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Storage Temperature
Repetitive Avalanche Current ^Note2
Repetitive Avalanche Energy ^Note2
Tstg
−55 to +175
°C
IAR
41
A
EAR
168
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19547EJ1V0DS00 (1st edition)
Date Published November 2008 NS
Printed in Japan
2008