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NP32N055HLE_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE,NP32N055ILE,NP32N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
• Low C iss: C iss = 1300 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HLE
NP32N055ILE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP32N055SLE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
±32
A
ID(pulse)
±100
A
Total Power Dissipation (TA = 25°C)
PT
1.2
W
Total Power Dissipation (TC = 25°C)
PT
66
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
−55 to +175
°C
IAS
28 / 21 / 8
A
EAS
7.8 / 44 / 64
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
(TO-251)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
2.27
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14137EJ5V0DS00 (5th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005