NP32N055HLE_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE,NP32N055ILE,NP32N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
• Low C iss: C iss = 1300 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HLE
NP32N055ILE ^Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP32N055SLE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±32
A
ID(pulse)
±100
A
Total Power Dissipation (TA = 25°C)
PT
1.2
W
Total Power Dissipation (TC = 25°C)
PT
66
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
−55 to +175
°C
IAS
28 / 21 / 8
A
EAS
7.8 / 44 / 64
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
(TO-251)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
2.27
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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Document No. D14137EJ5V0DS00 (5th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005