NP22N055HLE_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HLE, NP22N055ILE, NP22N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistors designed for high current switching
applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A)
RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A)
• Low Ciss : Ciss = 730 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP22N055HLE
NP22N055ILE ^Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP22N055SLE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
±22
A
ID(pulse)
±55
A
Total Power Dissipation (TA = 25°C)
PT
1.2
W
Total Power Dissipation (TC = 25°C)
PT
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
45
W
14 / 5
A
19 / 25
mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to +175 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
3.33
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14136EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005