NP180N055TUJ Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP180N055TUJ
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
R^D_(V^S(oGnS)
Limit
= ^{1i 0}
ed
V)
I_D(DC)
I_D(pulse)
PW
= _{1i00 μs}
Power Dissipation Limited
1_{i0 m}
sⁱ
10
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
400
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 0.43°C/Wi
0.1
0.01
Single Pulse
0.001
100
μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
R07DS0181EJ0100 Rev.1.00
Dec 22, 2010
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