NP180N04TUK_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP180N04TUK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100 _{RDS(ON) Limited}
(VGS = 10 V)
ID(DC) = 180 A
10
Power Dissipation Limited
ID(Pulse) = 720 A
PW _{= 100 µs}
1
Secondary Brakedown Limited
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
400
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
R_th(ch-A) = 83.3°C/W
10
1
R_th(ch-C) = 0.43°CW
0.1
Single pulse
0.01
0.1 m 1 m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
R07DS0542EJ0100 Rev.1.00
Sep 23, 2011
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