NP110N055PUJ_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N055PUJ
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP110N055PUJ-E1B-AY ^Note
NP110N055PUJ-E2B-AY ^Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low input capacitance
Ciss = 9500 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±110
A
ID(pulse)
±440
A
Total Power Dissipation (TC = 25°C)
PT1
288
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Energy ^Note2
Repetitive Avalanche Current ^Note3
Repetitive Avalanche Energy ^Note3
Tstg
−55 to +175
°C
EAS
435
mJ
IAR
66
A
EAR
435
mJ
(TO-263)
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19731EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009