N0801S Datasheet, PDF (3/5 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR

N0801S
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
VCE = 2 V
Pulsed
1
TA = 125˚C
25˚C
0.1
−25˚C
0.01
0.001
0.0001
0.0
100
0.3
0.6
0.9
1.2
VBE - Base to Emitter Voltage - (V)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
IE = 0
f = 1.0 MHz
10
10.1
1
10
100
VCB - Collector to Base Voltage - (V)
1000
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
VCE = 6 V
100
10
1
10000
10
100
IC - Collector Current - (mA)
1000
SWITCHING TIME vs.
COLLECTOR CURRENT
1000
100
10
10
tstg
tf
ton
VCE = 10 V
IC = 10IB1 = −10IB2
PW = 50 μs
100
1000
IC - Collector Current - (mA)
10000
R07DS0729EJ0100 Rev.1.00
May 30, 2012
Page 3 of 5