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N0501R_15 Datasheet, PDF (3/5 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR | |||
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N0501R
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
â10
VCE = â6 V
Pulsed
â1
TA = 125ËC
25ËC
â0.1
â25ËC
â0.01
â0.001
â0.0001
0.0
100
â0.3
â0.6
â0.9
â1.2
VBE - Base to Emitter Voltage - (V)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
IE = 0
f = 1.0 MHz
10
1â0.1
â1
â10
â100
VCB - Collector to Base Voltage - (V)
1000
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
VCE = â2 V
100
10
â1
10000
1000
100
â10
â100
IC - Collector Current - (mA)
â1000
SWITCHING TIME vs.
COLLECTOR CURRENT
VCE = â10 V
IC = 20IB1 = â20IB2
PW = 50 μs
ton
tstg
tf
10
â10
â100
â1000
IC - Collector Current - (mA)
â10000
R07DS0724EJ0100 Rev.1.00
Mar 30, 2012
Page 3 of 5
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