N0300N Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N0300N
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The N0300N is a switching device which can be driven directly by
a 4.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
3
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
• Built-in gate protection diode
1
2
0.95 0.95
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
N0300N-T1B-AT ^Note
PACKAGE
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
0 to 0.1
0.65
0.9 to 1.1
1. Gate
2. Source
3. Drain
Marking: XY
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±4.5
A
ID(pulse)
±18
A
Total Power Dissipation
Total Power Dissipation ^Note2
PT1
0.2
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19781EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009