HVM14S Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

HVM14S
Main Characteristic
10^–1
10^–3
10^–5
10^–7
10^–9
10^–11
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V_F (V)
Fig.1 Forward current vs. Forward voltage
f = 1MHz
10
10^–8
10^–9
10^–10
10^–11
10^–12
0
10 20 30 40 50
Reverse voltage V_R (V)
Fig.2 Reverse current vs. Reverse voltage
10⁴
f = 100MHz
10³
10²
1.0
10
0.1
1.0
10
100
Reverse voltage V_R (V)
Fig.3 Capacitance vs. Reverse voltage
1.100_–5
10^–4
10^–3
10^–2
Forward current I_F (A)
Fig.4 Forward resistance vs. Forward current
Rev.5.00, Oct.08.2003, page 3 of 4