HSB278S Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for High Speed Switching

HSB278S
Main Characteristic
10¹
10⁰
10^-1
10^-2 _{Ta = 75°C}
10^-3
Ta = 25°C
10^-4
10^-5
10^-6
10^-7
10^-8
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V_F (V)
Fig.1 Forward current vs. Forward voltage
f=1MHz
10
10^-4
10^-5
Ta = 75°C
10^-6
Ta = 25°C
10^-7
10^-8
0
10
20
30
40
Reverse voltage V_R (V)
Fig.2 Reverse current vs. Reverse voltage
1.0
0.1
0.1
1.0
10
Reverse voltage V_R (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00 Apr 12, 2005 page 3 of 4