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HRB0103A Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying | |||
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HRB0103A
Main Characteristic
10â2
10â3
Pulse test
10â4
10â5
10â6
10â7
10â8
10â9
0
0.1 0.2 0.3 0.4 0.5
Forward voltage VF (V)
Fig.1 Forward current vs. Forward voltage
10â2
10â3
Pulse test
10â4
10â5
10â6
10â7
0
10 20 30 40 50
Reverse voltage VR (V)
Fig.2 Reverse current vs. Reverse voltage
0.08
0.07
20hÃ15wÃ0.8t
D=1/6
0.06
0.05
0.04
1.5 Unit: mm
sin wave
D=1/3
D=1/2
DC
0.03
0.02
0.01
0
0
Io
0
tp
T
D = tp
T
20 40 60 80 100 120
Average rectified current Io (mA)
Fig3. Forward power dissipation vs. Average rectified current
0.08
0.07
VR is two device total
20hÃ15wÃ0.8t
DC
0.06
0.05
0.04
0.03
1.5 Unit: mm
0
VR
tp
T
D = tp
T
0.02
D=5/6
D=2/3
D=1/2
sin wave
0.01
0
0 5 10 15 20 25 30
Peak reverse voltage VRM (V)
Fig4. Forward power dissipation vs. Peak reverse voltage
Rev.2.00 May 10, 2005 page 3 of 5
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