HN58X25512I Datasheet, PDF (3/22 Pages) Renesas Technology Corp – Serial Peripheral Interface 512K EEPROM (64-Kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

HN58X25512I
Block Diagram
VCC
VSS
S
W
C
HOLD
D
Q
High voltage generator
Memory array
Y-select & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Symbol
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*¹
V_CC
V_IN
Topr
Storage temperature range
Tstg
Notes: 1. Including electrical characteristics and data retention.
2. V_IN (min): −3.0 V for pulse width ≤ 50 ns.
3. Should not exceed V_CC + 1.0 V.
DC Operating Conditions
Parameter
Symbol
Min
Supply voltage
Input voltage
Operating temperature range
V_CC
V_SS
V_IH
V_IL
Topr
1.8
0
V_CC × 0.7
−0.3*¹
−40
Notes: 1. V_IN (min): −1.0 V for pulse width ≤ 50 ns.
2. V_IN (max): V_CC + 1.0 V for pulse width ≤ 50 ns.
Value
Unit
−0.6 to +7.0
V
−0.5*² to +7.0*³
V
−40 to +85
°C
−65 to +125
°C
Typ
Max
Unit

5.5
V
0
0
V

V_CC + 0.5*²
V

V_CC × 0.3
V

+85
°C
Rev.1.00, Dec.18.2006, page 3 of 20