HITK0203MP_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 20V, 2.9A, 90mmax Silicon N Channel MOS FET Power Switching

HITK0203MP
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
10 V ^{Typical Output Characteristics}
5V
8
2.6 V
Pulse Test ^{2.4 V}
Tc = 25°C
2.8 V
2.2 V
6
3V
2.0 V
4
1.8 V
1.6 V
2
1.4 V
V_GS = 0 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (2)
1
V_DS = 10 V
Pulse Test
0.1
Tc = 75°C
0.01
25°C
0.001
–25°C
0.0001
0 0.5 1 1.5 2 2.5 3
Gate to Source Voltage V_GS (V)
Preliminary
Maximum Safe Operation Area
100
Operation in this area
is limited by R_DS(on)
10
1
0.1
DPCWOp=e1ra01t0i01omnmmsss
100 _μs
Ta = 25°C
1 Shot Pulse
0.01
0.01
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (1)
8
V_DS = 10 V
Pulse Test
6
4
2 ^{Tc = 75°C}
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
1.5
V_DS = 10 V
Pulse Test
1
ID = 10 mA
0.5
1 mA
0.1 mA
–025 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0481EJ0200 Rev.2.00
May 09, 2012
Page 3 of 6