HITJ0202MP Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

HITJ0202MP
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Preliminary
Maximum Safe Operation Area
–100
–10
Operation in this area
is limited by R_DS(on)
100 μs
–1
–0.1
DC _{OPpWer=at1i1o00n0m1msmss}
Ta = 25°C
1 Shot Pulse
–0.01
–0.01 –0.1
–1
–10 –100
Drain to Source Voltage V_DS (V)
Typical Output Characteristics
–8
–2.5 V
–2.9 V
–2.3 V
–6
–3.1 V
Pulse Test
Tc = 25°C
–2.1 V
–4.5 V
–4
–10 V
–1.9 V
–1.7 V
–2
–1.5 V
–1.3 V
V_GS = 0 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics (2)
–1
–0.1
V_DS = –10 V
Pulse Test
–0.01
75°C
–0.001
25°C
Tc = –25°C
–0.0001
0
–0.5
–1
–1.5
–2
Gate to Source Voltage V_GS (V)
Typical Transfer Characteristics (1)
–8
V_DS = –10 V
Pulse Test
–6
–4
–2
Tc = 75°C
25°C
–25°C
00
–1
–2
–3
–4
Gate to Source Voltage V_GS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
–1
–0.8
ID = –10 mA
–0.6
–1 mA
–0.4
–0.1 mA
–0.2
V_DS = –10 V
Pulse Test
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0474EJ0100 Rev.1.00
Jun 22, 2011
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