HIT468_09 Datasheet, PDF (3/5 Pages) Renesas Technology Corp – Silicon NPN Epitaxial

HIT468
Main Characteristics
Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
100
500 µA
80
400 µA
60
300 µA
40
200 µA
20
100 µA
0
I_B = 0.1 µA
0
2.0
4.0
6.0
8.0
Collector to Emitter Voltage V_CE (V)
10000
3000
DC Current Transfer Ratio vs.
Collector Current
V_CE = 2 V
Pulse
1000
300
100
Ta = 75°C
25°C
30
10
1
10
100
1000
Collector Current I_C (mA)
REJ03G1502-0300 Rev.3.00 Jun 23, 2009
Page 3 of 4
Typical Output Characteristics
1000
800
600
10 mA
9 mA
8 mA
7 mA
6 mA
5 ^mA
4 ^mA
3 ^mA
400
2 mA
200
1 mA
I_B = 0.1 mA
0
0
0.4
0.8
1.2
1.6
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
1000
V_CE = 2 V
Pulse
100
Ta = 75°C
25°C
10
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
Base to Emitter & Collector to Emitter
Saturation Voltage vs. Collector Current
0.15
I_C = 10 I_B
Pulse
0.10
Ta = 75°C
25°C
-25°C
0.05
V_CE(sat)
0
1
10
100
1000
Collector Current I_C (mA)