HAT2202C_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2202C
Main Characteristics
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
4.5 V
16
2.5 V
Pulse Test
2.0 V
12
1.8 V
8
1.6 V
4
V_GS = 1.2 V
1.4 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
160
Pulse Test
120
80
3A
1.5 A
40
I_D = 1 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1179EJ0700 Rev.7.00
Mar 19, 2014
Maximum Safe Operation Area
100
Ta = 25°C,1shot pulse
30 ^{PW =10 μs}
When using the FR4 board.
PW = 100 μs
10
3
1
0.3
Operation in this area
0.1 ^{is limited by RDS(on)}
0.03
0.01 0.03 0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
4
75°C
0
1
25°C
Tc = –25°C
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
100
10
0.1
2.5 V
V_GS = 4.5 V
1
10
100
Drain Current I_D (A)
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