HAT2193WP_09 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2193WP
Main Characteristics
Maximum Safe Operation Area
100
10
PW
10 _µs
1
= _{100 µs}
0.1
Operation in this
area is limited by
0.01 ^RDS(on)
Tc = 25°C
0.001 ^{1 shot}
0.1
1
10
100 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
4
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
2.0
Pulse Test
V_GS = 10 V
1.6
1.2
0.8
I_D = 7 A
0.4
3.5 A
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1252-0200 Rev.2.00 Jun 25, 2009
Page 3 of 6
Typical Output Characteristics
20
Pulse Test
Ta = 25°C
16
10 V 9 V 8 V 7 V
12
6.5 V
8
6V
4
5.5 V
V_GS = 5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
Pulse Test
V_GS = 10 V
Ta = 25°C
1
0.1
1
10
100
Drain Current I_D (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
V_GS = 0
f = 1 MHz
Ta = 25°C
1
0 25 50
Crss
75 100 125 150
Drain to Source Voltage V_DS (V)