HAT2171H Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2171H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
4V
40
3.8 V
Pulse Test
3.6 V
30
3.4 V
20
10
3.2 V
V_GS = 3 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
100
I_D = 20 A
50
10 A
5A
0
4
8 12 16 20
Gate to Source Voltage V_GS (V)
Rev.4.00 Sep 20, 2005 page 3 of 7
Maximum Safe Operation Area
500
100
10
1
DC
OpePraWtio=n1T0c¹_m=^m_s2^s₅
1001_µ^0sµs
°_C
Operation in
this area is
limited by R_DS(on)
0.1
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
0
2
25°C
–25°C
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
V_GS = 7 V
3
10 V
1
0.3
0.1
1
3 10 30 100 300 1000
Drain Current I_D (A)